agr26 045ef 45 w , 2.5 35 ghz?2.6 55 ghz , n-channe l e-mo de, la teral m o sfet introduc tion t he a g r26 045e f i s a hi gh- v olt a ge, gol d- me t ali ze d, enh anc em ent mod e, l ater a ll y d i f f us ed met a l o x i de se mi co nduc to r ( l dmo s ) rf p owe r t r a ns i s t or s ui t - abl e f or ul tr a hi gh- fr equ enc y ( u hf ) appl ic at ion s , in cl udi ng mul t ic ha nne l m u lt ipo i n t di str i buti o n se r v i c e ( mmds ) for b r o adc as tin g a nd c om mun ic ati ons . f i g u r e 1. a g r 2604 5e f ( f la n g e d ) p ac kag e feature s t y pic al pe r f o r man c e for mm ds sy s t ems . f = 2 600 m hz , i dq = 430 ma , vd s = 28 v , ad ja cen t ch ann el b w = 3.84 mhz , 5 mhz of fs et; alt er nate ch ann el b w = 3.84 mhz , 1 0 mh z o f f s et . t y pi ca l p /a rati o o f 9.8 db at 0 .01% ( p r o bab i l i ty ) ccdf* : ? o u tp ut p o wer : 6.5 w . ? p o we r g a i n : 13 db . ? ef fi ci en c y : 20 % . ? a c pr : ?3 4 db c . ? a c lr1 : ?3 6 db c . ? re tur n l o s s : ?15 db . t y pic al p ul s e d p 1d b , 6 s pu ls e at 10 % d uty : 4 7 w . hig h - r e l i abi li ty , gol d- me t a li za tio n pr o c es s . low hot c ar r i e r inj ec t io n ( hci) i ndu ce d bi as dr i f t ov er 20 ye ar s. inte r n all y mat c he d. hig h ga in, ef fic i e nc y , and li nea r i ty . inte gr ated es d p r o t ec tio n. dev i c e c an wi ths t and a 1 0:1 vo lt ag e s t an din g wa ve r a tio ( v s w r) a t 28 vd c, 2 600 mhz , 4 5 w c onti nu- ous wav e ( c w ) ou tput powe r . lar ge si gn al i mp eda nc e p ar am ete r s av ai la bl e. * t h e test signal ut ilized i s 4-c hannel w -cdm a t es t model 1. t his t e s t signal pro v ides an equivalent ref e rence (oc c upied bandwid t h and w a vef o rm ep f ) f o r t he act ual perf o rmanc e wit h an mm ds w a vef o rm . t a b le 1 . t h e r m al ch a r ac t e rist ic s t a ble 2 . abs o lute m a x i mum ra tings * * s t ress e s in exces s of t he absolut e m a ximum rat i ngs can caus e perm anent dam age t o t he device. t hes e are absolut e s t re ss rat - ings onl y . f unct i ona l operat ion of t he dev ice is not im pl ied at t hes e or any ot her c ondit i ons in ex cess of t hose given i n t h e operat ional sec t ions of t he dat a s heet . e xpos ure t o absolut e max i mum rat i ngs f o r ext ended periods can a d versely af f e ct device reliabil i t y . t a ble 3 . es d r a ting * * alt hough elec t ros t a t i c d i s c harge (es d ) prot ect i on circu i t r y has been designed i n t o t h is device, pro per pr ecaut i ons m u st be t a ken t o avoid ex posure t o es d and elect rical overst res s ( eo s) during al l handli n g, assem bly , and t es t operat i on s. ager e employ s a hum an-body mod e l (hb m), a mac h ine m odel (m m) , and a cha rged-devic e m odel (cd m) quali f icat i o n requirem ent in order t o determine e s d-s us cept i bilit y limit s a nd protec tion design ev al ua t i on. e s d volt age t hres hol d s are depende nt on t he circu i t p a ramet e rs used in eac h of t he m odels, as def ined by je dec's je sd22-a 1 14b (hb m) , jes d 22-a 1 15a (mm ), and je sd22-c 101a (cdm ) s t andar ds. cau ti o n : mo s d evi ces are su s cep t i b l e to d a mag e fro m el ec- tro s t a ti c ch arg e . reaso n a b l e p r ecau ti o n s i n h a n - d l i n g an d p a c kag i n g mo s d evi c es sh o u l d b e o b served . pa ram e t e r s ym v a lu e u n i t th er ma l r e si st a n c e , j unc ti on to ca se r ? jc 1. 5 c / w pa r a m e te r s y m v a l u e u ni t d r ai n- so ur ce v o lt ag e v ds s 65 v dc g a t e -s o u rc e v o l t a g e v gs ?0.5 , + 15 v dc t o t a l di ssi p a t i on at t c = 2 5 c p d 11 7 w der ate a bov e 25 c ? 0. 67 w / c o p er ati ng ju nc tio n t e m per a- tur e t j 200 c s t or ag e t em p er at u r e r a ng e t stg ?6 5, +1 50 c ag r26 045 ef m in imu m ( v ) cla ss hbm 500 1 b mm 50 a cdm 1500 4 peak devices
45 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet AGR26045EF electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2645 mhz, and f2 = 2655 mhz. v dd = 28 vdc, i dq = 430 ma, and p out = 6.5 w avg. parameter symbol min typ max unit off characteristics drain-source breakdown voltage (v gs = 0, i d =50a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ??2adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ??5adc on characteristics forward transconductance (v ds = 10 v, i d = 0.5 a) g fs ? 3.2 ? s gate threshold voltage (v ds =10v, i d = 150 a) v gs(th) ? ? 4.8 vdc gate quiescent voltage (v ds = 28 v, i d = 430 ma) v gs(q) ? 3.8 ? vdc drain-source on-voltage (v gs =10v, i d = 0.5 a) v ds(on) ? 0.22 ? vdc parameter symbol min typ max unit dynamic characteristics reverse transfer capacitance (v ds =28v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 1.0 ? pf functional tests (in agere systems supplied test fixture) common-source amplifier power gain* g ps ? 13 ? db drain efficiency* ? 21 ? % third-order intermodulation distortion* (im3 distortion measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ? ?38 ? dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ? ?40 ? dbc input return loss* irl ? ?15 ? db power output, 1 db compression point (v dd = 28 v, f c = 2655.0 mhz. cw) p 1db 43 ? ? w output mismatch stress (v dd = 28 v, p out = 45 w (cw), i dq = 430 ma, f c = 2655.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power. 75 (in supplied test fixture) = 200 a
AGR26045EF 45 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet test circuit illustrations for AGR26045EF a. schematic parts list: microstrip line: z1 0.496 in. x 0.066 in.; z2 0.235 in. x 0.066 in.; z3 0.200 in. x 0.090 in.; z4 0.142 in. x 0.090 in.; z5 0.215 in. x 0.090 in .; z6 0.320 in. x 0.470 in.; z7 0.410 in. x 0.050 in.; z8 0.155 in. x 0.170 in.; z9 0.470 in. x 0.330 in.; z10 0.670 in. x 0.050 i n.; z11 0.530 in. x 0.066 in.; z12 0.670 in. x 0.066 in. atc ? chip capacitor: c1, c2, c5, c6: 4.7 pf 100b47_j500; c11: 0. 1 pf 100a0r1j_500; c12: 1.5 pf 100a15jw; c13 0.3 pf 100b0r3bw. murata ? 0805 capacitor: c8: 0.1 f. vitramon ? 1206 size capacitor c3, c7: 22000 pf. 1206 size chip resistor: r1; 12 ? . fair-rite ? ferrite bead fb1: 2743018447. kemet ? capacitor: c4, c10: 22 f, 35 v; c9: 0.1 f 1206 case. taconic ? orcer rf-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5. b. component layout figure 2. AGR26045EF component layout dut r1 c4 + c1 z2 z1 c5 z12 rf input v gg v dd rf output z7 fb1 c3 c2 c8 3 1 2 pins: 1. drain 2. gate 3. source c6 c7 c10 + c9 z3 z4 z10 z11 z9 c13 z5 z6 z8 c13 23 1
45 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet AGR26045EF typical performance characteristics figure 3. series equivalent input and output impedances mhz (f) z s ? ( complex source impedance ) z l ? ( complex optimum load impedance ) 2500 (f1) 13.4 ? j9.0 7.2 ? j7.1 2550 (f2) 12.8 ? j9.3 6.7 ? j7.1 2600 (f3) 12.2 ? j9.5 6.2 ? j6.5 2650 (f4) 11.6 ? j9.6 5.7 ? j5.9 2700 (f5) 11.1 ? j9.7 5.4 ? j5.4 0.1 0.1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 10 10 10 20 20 20 50 50 50 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0.8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 0.21 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0.28 0.29 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) f z s f5 f1 z l f5 f1 z 0 = 25 ? dut z s z l input match output match drain (1) source (3) gate (2)
AGR26045EF 45 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) figure 4. cw broadband performance test conditions: two-tone measurement @ 10 mhz tone spacing, v dd = 28 v dc , f1 = 2590 mhz, f2 = 2600 mhz. figure 5. imd3 vs. output power and i dq 20 25 30 35 40 45 50 55 60 2500 2550 2600 2650 2700 frequency, mhz z power (dbm), pae (%) z -20 -15 -10 -5 0 5 10 15 20 gain (db), irl (db) z gain pae p1db irl -60 -55 -50 -45 -40 -35 -30 -25 -20 0.1 1 10 10 0 output pow er (w ) pep z imd3 (dbc) z 300 ma 350 ma 400 ma 450 ma 500 ma
45 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet AGR26045EF typical performance characteristics (continued) test conditions: two-tone measurement @ 10 mhz tone spacing, v dd = 28 v dc , f1 = 2590 mhz, f2 = 2600 mhz. figure 6. two-tone imd vs. power test conditions: v dd = 28 v, i dq = 430 ma, p out = 45 w (pep), f = 2595 mhz. figure 7. two-tone im3 vs. tone spacing -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 1 10 100 p out (w, pep) ) dbc x 0 5 10 15 20 25 30 35 40 45 im3 im5 im7 -60 -50 -40 -30 -20 -10 0 0.1 1 10 100 tone spacing (mhz) z imd (dbc) z im3 im5 im7
AGR26045EF 45 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: two-carrier w-cdma 3gpp, peak-to- average = 8.5 db @ 0.01% ccdf, f1 = 2590 mhz, f2 = 2600 mhz, v dd = 28 v, i dq = 430 ma. figure 8. gain, efficiency, acp, and imd vs. power test conditions: two-carrier w-cdma 3gpp, peak-to-av erage = 8.5 db @ 0.01% ccdf, p out = 6.5 w, v dd = 28 v, i dq = 430 ma. figure 9. two-carrier w-cdma broadband performance -60 -50 -40 -30 -20 -10 0 0 5 10 15 p out (w ) z imd, acp (dbc) z 0 5 10 15 20 25 30 pae (%), gain (db) z pae gain imd acp -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 2500 2550 2600 2650 2700 frequency, mhz z acp, imd (dbc); irl (db) z 0 5 10 15 20 25 gain (db), pae (%) z pae irl gain imd acp
45 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet AGR26045EF typical performance characteristics (continued) test conditions: two-carrier w-cdma 3gpp, peak-to-average = 8.5 db @ 0.01% ccdf, p out = 6.5 w, v dd = 28 v, i dq = 430 ma. figure 10. spectrum center 2.6 ghz span 50 mhz -45 -40 -35 -30 -25 -20 -15 -10 -5 0 | imd3 ? | | imd3 ? | | ? | acp acp | ? | | f1 ?| | f2 ?|
preliminary data sheet AGR26045EF june 2004 45 w, 2.535 ghz?2.655 ghz, n-channel e-mode, lateral mosfet package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. AGR26045EF label notes: m before the part number denotes model program. x bef ore the part number denot es engineering prototype. the last two letters of the part number denote wafer technology and package type. yywwll is the date code including place of ma nufacture: year year work week (yyww), ll = location (al = allentown, pa; t = thai land). xxxxx = five-digit wafer lot number. zzzzzzz = seven-digit assembly lot number on production parts. zzzzzzzzzzzz = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes. agr21045f yywwll zzzzzzz 1 2 3 1 3 2 pins: 1. drain 2. gate 3. source peak devices agr26045xf yywwll xxxxx zzzzzzz
|
